二硒化锡晶体 SnSe2 (Tin Selenide)
晶体尺寸:~8毫米
电学性能:半导体
晶体结构:六边形
晶胞参数:a = b = 0.381, c = 0.614 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a SnSe2 single crystal aligned along the (001) plane. XRD diffraction was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5
Powder X-ray diffraction (XRD) of a single crystal SnSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal SnSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal SnSe2. Measurement was performed with a 785 nm Raman system at room temperature.