咨询热线

13651969369

当前位置:首页   >  产品中心  >  二维材料  >  黑磷  >  Silicon phosphide (SiP)

Silicon phosphide (SiP)

简要描述:Silicon phosphide (SiP) is a layered semiconductor crystallizing in 2D anisotropic / orthorhombic crystal phase. It has been shown to undergo indirect (bulk) to direct (monolayer) gap transition from

  • 更新时间:2022-06-08
  • 产品型号:
  • 厂商性质:生产厂家
  • 访  问  量:116

详细介绍

Silicon phosphide (SiP) is a layered semiconductor crystallizing in 2D anisotropic / orthorhombic crystal phase. It has been shown to undergo indirect (bulk) to direct (monolayer) gap transition from 1.69 (bulk) to 2.5 eV (monolayer). The atoms are arranged to form 1D-like features much similar to BLACK PHOSPHORUS, BLACK ARSENIC, GATE, and RES2. Owing to its highly anisotropic atomic arrangement, it has been shown to host anisotropic excitons, thermal conduction, optical absorption, as well as electronic mobility. Our SiP crystals are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below). These crystals are treated as gold standards in 2D materials field owing to perfected optical and electronic behavior. SiP crystals appear to be fibrous (microscale layered ribbons) that are ready for exfoliation as shown in the images.


Growth method matters Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Self-transport growth technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, self-transport method takes long (~1-2 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 



产品咨询

留言框

  • 产品:

  • 您的单位:

  • 您的姓名:

  • 联系电话:

  • 常用邮箱:

  • 省份:

  • 详细地址:

  • 补充说明:

  • 验证码:

    请输入计算结果(填写阿拉伯数字),如:三加四=7
泰州巨纳新能源有限公司
  • 联系人:陈谷一
  • 地址:江苏省泰州市凤凰西路168号
  • 邮箱:taizhou@sunano.com.cn
  • 电话:021-56830191
联系我们

扫一扫以下二维码了解更多信息

销售微信咨询

网站二维码

版权所有©2022泰州巨纳新能源有限公司All Rights Reserved    备案号:苏ICP备17000059号-2    sitemap.xml    总访问量:15723
管理登陆    技术支持:化工仪器网