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基于蓝宝石衬底的全区域覆盖的单层二硒化钨

简要描述:This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WSe2 sheet.

  • 更新时间:2022-07-15
  • 产品型号:
  • 厂商性质:生产厂家
  • 访  问  量:95

详细介绍

This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WSe2 sheet. Synthesized full area coverage monolayer WSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications)



Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Sapphire c-cut (0001)

Coverage

Full monolayer coverage

Electrical properties

       1.62 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°

Production method

Low pressure Chemical Vapor Deposition (LPCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS



Specifications

1)    Identification. Full coverage 100% monolayer WSe2 uniformly covered across c-cut sapphire

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4)    Uniformity. Highly uniform surface morphology. WSe2 monolayers uniformly cover across the sample.

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. c-cut Sapphire but our research and development team can transfer WSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9)    Defect profile. WSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected WSe2 using α-bombardment technique.


Supporting datasets [Full area coverage monolayer WSe2 on c-cut Sapphire]


Transmission electron images (TEM) acquired from CVD grown full area coverage WSe2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers


Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage monolayer WSe2 on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.67 eV in agreement with the literature.


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泰州巨纳新能源有限公司
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  • 地址:江苏省泰州市凤凰西路168号
  • 邮箱:taizhou@sunano.com.cn
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