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基于蓝宝石衬底的全区域覆盖的单层二硫化锡

简要描述:This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnS2 sheet.

  • 更新时间:2024-06-03
  • 产品型号:
  • 厂商性质:生产厂家
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详细介绍

This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnS2 sheet. Synthesized full area coverage monolayer SnS2 is highly crystalline, some regions also display significant crystalline anisotropy.



Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Sapphire c-cut (0001)

Coverage

Full monolayer coverage

Electrical properties

       2.2 eV Indirect Gap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.362, c = 0.590 nm,

α = β = 90°, γ = 120°

Production method

Low Pressure Chemical Vapor Deposition (LPCVD)

Characterization methods

Raman, angle resolved Raman spectroscopy,

photoluminescence, absorption spectroscopy TEM, EDS

Specifications

1)    Identification. Full coverage 100% monolayer SnS2 uniformly covered across c-cut sapphire

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4)    Uniformity. Highly uniform surface morphology. SnS2 monolayers uniformly cover across the sample.

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. c-cut Sapphire but our research and development team can transfer SnS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9)    Defect profile. SnS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected          SnS2 using α-bombardment technique.


Supporting datasets [for 100% Full area SnS2 monolayers on c-cut Sapphire]


Transmission electron images (TEM) acquired from CVD grown full area coverage SnS2 monolayers on c-cut sapphire confirming high crystallinity


Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer SnS2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and shows the high crystallinity of the CVD samples. PL spectrum does not show any PL signal due to indirect band nature.



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  • 地址:江苏省泰州市凤凰西路168号
  • 邮箱:taizhou@sunano.com.cn
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